AMD: semiconduttori più piccoli, veloci ed efficienti realizzati con tecnologia da 32 nanometri

AMD: semiconduttori più piccoli, veloci ed efficienti realizzati con tecnologia da 32 nanometri Carissima/o, AMD ha resonoto oggi che IBM, insieme ai suoi partner,Chartered Semiconductor Manufacturing Ltd., Freescale, Infineon e Samsung oltrealla stessa AMD, ha annunciato un approccio innovativo per velocizzarel'implementazione di un materiale rivoluzionario denominato "high-k/metal gate" nei chip da 32nanometri (32nm) di prossima generazione.

12/dic/2007 10.49.00 pergola Contatta l'autore

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Carissima/o,

 

AMD ha resonoto oggi che IBM, insieme ai suoi partner,Chartered Semiconductor Manufacturing Ltd., Freescale, Infineon e Samsung oltrealla stessa AMD, ha annunciato un approccio innovativo per velocizzarel'implementazione di un materiale rivoluzionario denominato “high-k/metal gate” nei chip da 32nanometri (32nm) di prossima generazione.

 

Questo nuovo approccio – unanovità assoluta basata su quello che i tecnici indicano come processo“high-k gate-first” – è stato progettato per fornire aiclienti un metodo più semplice e rapido per migrare verso la tecnologia high-kmetal gate e i relativi vantaggi in terminidi aumento delle prestazioni e riduzione dei consumi di corrente. Ichip realizzati con la nuova tecnica supporteranno una serie di applicazioni,dai microchip a basso consumo per dispositivi wireless e altri prodotticonsumer-oriented fino ai microprocessori ad alte prestazioni destinati aivideogiochi e all'enterprise computing. Il nuovo approccio all'implementazionedella tecnologia high-k metal gate sarà reso disponibile da IBM ai propripartner e ai loro clienti nella seconda metà del 2009.

 

Di seguito la notizia in inglese.

 

Per ulteriori informazioni:

 

Gary Silcott -AMD Public Relations - gary.silcott@amd.com 512-602-1480

AnnaCarzana  -  AMD Public Relations  -  Tel. + 3902.3008161                 
Luisella Lucchini  - Imageware  -  Tel. +39 02.700251
 
Cordialità
Cristina Pergola  

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IBM ALLIANCES DELIVER EASIER PATH TO NEXT

GENERATION SEMICONDUCTOR PRODUCTS

 

Smaller, faster more power-efficient* 32 nanometersemiconductors

 span low-power consumer devices, high-performancecomputing

 

ARMONK, NY, DECEMBER 11, 2007 -- IBM (NYSE: IBM) and its jointdevelopment partners -- AMD, Chartered Semiconductor Manufacturing Ltd.,Freescale, Infineon, and Samsung -- today announced an innovative approach tospeed the implementation of a breakthrough material known as“high-k/metal gate” in next generation 32 nanometer (32nm) computerchips. 

Thisnew approach, an industry first based on what engineers call a “high-kgate-first” process, is designed to providea simpler, less time consuming way for clients to migrate to high-k metal gatetechnology in order to secure benefits that include improved performance andreduced power consumption.  Chipsusing the new technique will support a range of applications - from low powercomputer microchips targeted at wireless and other consumer-oriented devices tohigh performance microprocessors for games and enterprise computing.  Thisnew approach to implementing high-k/metal gate will be available to IBM alliance members andtheir clients in the second half of2009. **

OnJanuary 29, 2007, IBM and its research partners (including Sony and Toshiba)introduced the "high-k/metal gate” innovation as the basis for along-sought improvement to the transistor – the tiny on/off switch thatserves as the basic building block of virtually all microchips made today.Using the high-k/metal gate material in a critical portion of the transistorthat controls its primary on/off switching function enabled the development of32nm chip circuitry that is designed to be smaller, faster, and morepower-efficient than previously thought possible.

Usinghigh-k/metal gate IBM and its Alliance Partners have been able to successfullyshrink the size of a chip by up to 50 percent as compared to the previoustechnology generation while improving a number of other performancespecifications. For example, high-k metal gate chips save about 45 percenttotal power, an increasingly critical metric in all electronics applications.Together these improvements will help to increase functionality and performancewith lower power consumption and improved battery life in mobile devices. Formicroprocessor applications, this innovation also enables up to 30 percenthigher performance as documented in measurements performed by IBM and itsAlliance Partners at IBM’s East Fishkill,NY semiconductor manufacturing facility.

 

"IBM’salliances have demonstrated the ‘high-k gate-first’ approach in amanufacturing environment, an achievement that provides clients with a simple,scalable pathway to incorporating the high k material innovation in semiconductordevelopment without introducing additional design complexity," said GaryPatton, vice president, IBM's Semiconductor Research and Development Center onbehalf of IBM's technology alliances. "This industry leading developmentcomes from leveraging the collective engineering talent and breadth of marketexperience across the six Alliance Partner companies, as well as world classR&D facilities such as UAlbany NanoCollege’s Albany NanoTech complex,in order to maintain an aggressive road map.”

 

IBMand its Alliance Partners have developed low-power foundry Complementary MetalOxide Semiconductor (CMOS) technology using the 'high-k gate-first' approachand have demonstrated the first 32nm ultra dense static random access memory(SRAM) in this low power technology with cell sizes below 0.15um2.  SRAMs are a key building block of computer chip designs and an excellentindicator of the readiness of a technology.  The unique characteristics ofthe high-k material reduces total chip power consumption by as much as a 45percent compared to the previous generation, a critical technology factor forachieving longer battery life in hand held devices such as cell phones, pagers,and PDA's.

 

Inaddition, IBM and its Alliance Partners have incorporated the high-k innovationinto a new generation of high performance Silicon-On-Insulator (SOI) technologyat 32nm.  The unique high-k material properties enable a transistor speedimprovement of greater than 30 percent over the previous generation of highperformance Silicon-On-Insulator (SOI) technology.  The SRAM demonstratedin this new generation of high performance technology functions at a lowervoltage - an improvement that reduces the energy consumption for microprocessorapplications.  The use of SOI provides a significant performance and powerbenefit, which, in combination with the high-k/metal gate advancement, willhelp the technology deliver energy efficient chips used in applications such asgames, personal computers, and high end computing systems.  

 

Today’s announcementmarks the latest development achievement from this alliance of semiconductormanufacturing, development and technology companies that collaborate to addressthe product design and advanced process development challenges central to producinga smaller, faster, more cost efficient generation of semiconductors.

 

* As documented in measurementsperformed by IBM and its Alliance Partners at IBM’s East Fishkill, NY semiconductor manufacturing facility.

 

** All future dates andspecifications are estimations only; subject to change without notice.

 


 
 

 

 

 

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